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IRF7807VD2中文资料PDF规格书
IRF7807VD2规格书详情
Description
The FETKY™ family of Co-Pack HEXFETMOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
• Co-Pack N-channel HEXFET® Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
产品属性
- 型号:
IRF7807VD2
- 功能描述:
MOSFET N-CH 30V 8.3A 8-SOIC
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
FETKY™
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
4214 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
22+ |
SO-8 |
8000 |
原装正品支持实单 |
询价 | ||
IRF7807VD2PBF |
3596 |
3596 |
询价 | ||||
IR |
SOP-8 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
VISHAY-威世 |
24+25+/26+27+ |
SOP-8.贴片 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IR |
17+ |
SOP8 |
6200 |
100%原装正品现货 |
询价 | ||
IR |
23+ |
8000 |
专注配单,只做原装进口现货 |
询价 | |||
Infineon Technologies |
2022+ |
8-SOIC(0.154 |
38550 |
询价 | |||
IR |
1923+ |
SOP-8 |
10000 |
公司进口原装特价处理 |
询价 | ||
IR |
23+ |
SOP-8 |
69000 |
全新原装现货热卖/代理品牌/可申请样品和规格书 |
询价 |