IRF7726中文资料IRF数据手册PDF规格书
IRF7726规格书详情
Description
HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management.
The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (
● Ultra Low On-Resistance
● P-Channel MOSFET
● Very Small SOIC Package
● Low Profile (< 1.2mm)
● Available in Tape & Reel
产品属性
- 型号:
IRF7726
- 功能描述:
MOSFET P-CH 30V 7A MICRO8
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
4250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
25+23+ |
TSSOP8 |
17078 |
绝对原装正品全新进口深圳现货 |
询价 | ||
Infineon/英飞凌 |
24+ |
Micro-8 |
25000 |
原装正品,假一赔十! |
询价 | ||
IR |
22+ |
MICRO-8 |
8000 |
原装正品支持实单 |
询价 | ||
Infineon/英飞凌 |
21+ |
Micro-8 |
6820 |
只做原装,质量保证 |
询价 | ||
IR |
23+ |
TSSOP |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
IOR |
24+ |
SOP8 |
4000 |
询价 | |||
IR |
2016+ |
MSOP8 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
IR |
23+ |
MICRO-8 |
2115 |
原装正品代理渠道价格优势 |
询价 | ||
原厂 |
23+ |
QFN |
31000 |
原装正品,假一罚十 |
询价 |