IRF737LC中文资料威世科技数据手册PDF规格书

DESCRIPTION

This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs.

These device improvements combined with the proven ruggedness and reliability that are characteristics of Power MOSFETs offer the designer a new standard in power transistors for switching applications.

FEATURES

• Reduced Gate Drive Requirement

• Enhanced 30 V VGS Rating

• Reduced Ciss, Coss, Crss

• Extremely High Frequency Operation

• Repetitive Avalanche Rated

• Lead (Pb)-free Available