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IRF7353D2PBF中文资料PDF规格书
IRF7353D2PBF规格书详情
Description
The FETKY™ family of Co-Pack HEXFET® Power MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifiers low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
● Co-Pack HEXFET® Power MOSFET and
Schottky Diode
● Ideal For Buck Regulator Applications
● N-Channel HEXFET power MOSFET
● Low VF Schottky Rectifier
● Generation 5 Technology
● SO-8 Footprint
● Lead-Free
产品属性
- 型号:
IRF7353D2PBF
- 功能描述:
MOSFET 30V FETKY 20 VBRD 29mOhms 22nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
SOP-8 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
VISHAY-威世 |
24+25+/26+27+ |
SOP-8.贴片 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IR |
17+ |
SOP8 |
6200 |
100%原装正品现货 |
询价 | ||
IR |
23+ |
SOP8 |
5000 |
原装正品,假一罚十 |
询价 | ||
IR |
2020+ |
SOP8 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
IR |
22+ |
8-SO |
25000 |
只有原装原装,支持BOM配单 |
询价 | ||
Infineon Technologies |
2022+ |
8-SOIC(0.154 |
38550 |
询价 | |||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
询价 | ||
IR |
1923+ |
SOP8 |
5000 |
正品原装品质假一赔十 |
询价 | ||
IR |
22+ |
SOP8 |
32350 |
原装正品 假一罚十 公司现货 |
询价 |