IRF737LC中文资料PDF规格书
IRF737LC规格书详情
Description
This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new Low Charge MOSFETs.
These device improvements combined with the proven ruggedness and reliability that are characteristics of HEXFETs offer the designer a new standard in power transistors for switching applications.
● Reduced Gate Drive Requirement
● Enhanced 30V VGS Rating
● Reduced CISS, COSS, CRSS
● Extremely High Frequency Operation
● Repetitive Avalanche Rated
产品属性
- 型号:
IRF737LC
- 功能描述:
MOSFET N-Chan 300V 6.1 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
21+ |
TO2203 |
13880 |
公司只售原装,支持实单 |
询价 | ||
IR |
TO-22O |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
IR |
2022 |
TO-220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
IR |
2020+ |
TO-220AB |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IR |
23+ |
NA |
8990 |
专做原装正品,假一罚百! |
询价 | ||
IR |
08+(pbfree) |
TO-220AB |
8866 |
询价 | |||
VISHAY-威世 |
24+25+/26+27+ |
TO-220-3 |
9328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IR |
2023+ |
TO-220 |
4675 |
全新原厂原装产品、公司现货销售 |
询价 | ||
IRC |
1535+ |
248 |
询价 | ||||
IR |
TO-220 |
68900 |
原包原标签100%进口原装常备现货! |
询价 |