Advanced Process Technology

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Advanced Process Technology

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

文件：340.74 Kbytes 页数：11 Pages

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HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40廓 , ID = 9.0A )

文件：2.10068 Mbytes 页数：8 Pages

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Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：579.72 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

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