IRF5803PBF中文资料IRF数据手册PDF规格书

描述 Description

These P-channel HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60 less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. Its unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300 compared to the SOT-23.

● Ultra Low On-Resistance

● P-Channel MOSFET

● Surface Mount

● Available in Tape & Reel

● Low Gate Charge

● Lead-Free

● Halogen-Free