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IRF5803D2PBF中文资料IRF数据手册PDF规格书
IRF5803D2PBF规格书详情
VDSS = -40V
RDS(on) = 112mΩ
Schottky Vf = 0.51V
描述 Description
The FETKY™ family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifiers low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
● Co-packaged HEXFET® Power MOSFET and Schottky Diode
● Ideal For Buck Regulator Applications
● P-Channel HEXFET®
● Low VF Schottky Rectifier
● SO-8 Footprint
● Lead-Free
产品属性
- 型号：
IRF5803D2PBF
- 功能描述：
MOSFET 30V 1 N-CH 112mOhm HEXFET -40V VDSS
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
3265 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
22+ |
SOP |
8000 |
原装正品支持实单 |
询价 | ||
IR |
24+ |
SOP8 |
2489 |
询价 | |||
IR |
17+ |
SO-8 |
6200 |
100%原装正品现货 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
7000 |
询价 | |||
IR |
22+ |
8-SO |
25000 |
只有原装原装,支持BOM配单 |
询价 | ||
Infineon Technologies |
2022+ |
8-SOIC(0.154 |
38550 |
询价 | |||
IOR |
1923+ |
SOP-8 |
10000 |
公司进口原装特价处理 |
询价 | ||
IR |
24+ |
SOP8 |
20000 |
一级代理原装现货假一罚十 |
询价 | ||
IR |
20+ |
SOP |
2960 |
诚信交易大量库存现货 |
询价 |
