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IRF520NS

PowerMOSFET(Vdss=100V,Rds(on)=0.20ohm,Id=9.7A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF520NS

Low-profilethrough-hole(IRF520NL)

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowin

KERSEMI

Kersemi Electronic Co., Ltd.

IRF520NS

AdvancedProcessTechnology

IRF

International Rectifier

IRF520NS

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF520NS

N-Channel100-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF520NSPBF

Advamced{rpcessTechnologySurfaceMount

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF520NSPBF

FASTSWITCHING

IRF

International Rectifier

IRF520NSTRLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF520NSTRR

AdvancedProcessTechnology

IRF

International Rectifier

IRF520PBF

HEXFETPowerMOSFET

HEXFET®PowerMOSFET

IRF

International Rectifier

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