IRF520数据手册Infineon中文资料规格书
IRF520规格书详情
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
技术参数
- 型号：
IRF520
- 功能描述：
MOSFET N-Chan 100V 9.2 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ST/意法 |
24+ |
NA/ |
549 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
onsemi(安森美) |
24+ |
TO220 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
IR |
25+ |
TO-220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
IR/VISHAY |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
IR |
2023+ |
TO-263 |
50000 |
原装现货 |
询价 | ||
IR |
22+ |
TO-220 |
8900 |
全新正品现货 有挂就有现货 |
询价 | ||
IR |
24+ |
TO 220 |
161301 |
明嘉莱只做原装正品现货 |
询价 | ||
24+/25+ |
33 |
原装正品现货库存价优 |
询价 | ||||
IR |
1948+ |
TO-220 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 |
