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IRFM340

400V.N-CHANNELHEXFETMOSFETTECHNOLOGY

POWERMOSFETTHRU-HOLE(TO-254AA) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRF

International Rectifier

IRFM340

SimpleDriveRequirements

IRF

International Rectifier

IRFN340

POWERMOSFETN-CHANNEL(BVdss=400V,Rds(on)=0.55ohm,Id=10A)

RDS(on)0.55Ω ID10A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establis

IRF

International Rectifier

IRFN340

SimpleDriveRequirements

IRF

International Rectifier

IRFN340SMD

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP340

11A,400V,0.550Ohm,N-ChannelPowerMOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFP340

PowerMOSFET(Vdss=400V,Rds(on)=0.55ohm,Id=11A)

DESCRIPTION ThirdGenerationHEXFETsfrominternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastS

IRF

International Rectifier

IRFP340

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFP340

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFP340

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技威世科技半导体

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