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IRF3315SPBF中文资料IRF数据手册PDF规格书
IRF3315SPBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
• Advanced Process Technology
• Surface Mount (IRF3315S)
• Low-profile through-hole (IRF3315L)
• 175°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Lead-Free
产品属性
- 型号：
IRF3315SPBF
- 功能描述：
MOSFET 150V 1 N-CH HEXFET 82mOhms 63.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
501274 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
IR |
24+ |
65230 |
询价 | ||||
IR |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
25+ |
TO263 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
IR |
22+ |
TO263 |
12000 |
只做原装、原厂优势渠道、假一赔十 |
询价 | ||
IR |
11+ |
TO-263 |
10 |
询价 | |||
Infineon(英飞凌) |
24+ |
D2PAK |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
IR |
23+ |
TO-263 |
52452 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
Infineon Technologies |
23+ |
原装 |
7000 |
询价 |
