ADVANCED PROCESS TECHNOLOGY

文件：237.5 Kbytes 页数：8 Pages

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HEXFET Power MOSFET

文件：143.01 Kbytes 页数：8 Pages

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ADVANCED PROCESS TECHNOLOGY

文件：237.5 Kbytes 页数：8 Pages

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Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：197.25 Kbytes 页数：10 Pages

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Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件：189.07 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：386.58 Kbytes 页数：10 Pages

IRF