IRF2807S-LF技术资料参数贸易商无锡固电IRF-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IRF2807SPBF	文件：4.24691 Mbytes Page：10 Pages	AdvancedProcessTechnologyUltraLowOn-Resistance Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF2807SPBF	文件：269.4 Kbytes Page：10 Pages	HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p	IRF International Rectifier	IRF
IRF2807STRLPBF	文件：133.54 Kbytes Page：11 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRF2807Z	文件：272.67 Kbytes Page：12 Pages	AdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRF International Rectifier	IRF
IRF2807Z	文件：340.21 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRF2807Z	文件：279.61 Kbytes Page：13 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRF2807Z	文件：4.64052 Mbytes Page：12 Pages	AUTOMOTIVEMOSFETAdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF2807ZL	文件：4.64052 Mbytes Page：12 Pages	AUTOMOTIVEMOSFETAdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF2807ZL	文件：301.04 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IRF2807ZL	文件：279.61 Kbytes Page：13 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRF2807ZL	文件：272.67 Kbytes Page：12 Pages	AdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRF International Rectifier	IRF
IRF2807ZLPBF	文件：279.79 Kbytes Page：12 Pages	AUTOMOTIVEMOSFET(75V,94mOHM,75A) Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb	IRF International Rectifier	IRF
IRF2807ZLPBF	文件：405.08 Kbytes Page：12 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRF2807ZPBF	文件：405.08 Kbytes Page：12 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRF2807ZPBF	文件：405.08 Kbytes Page：12 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRF2807ZPBF	文件：279.79 Kbytes Page：12 Pages	AUTOMOTIVEMOSFET(75V,94mOHM,75A) Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb	IRF International Rectifier	IRF
IRF2807ZS	文件：279.61 Kbytes Page：13 Pages	AdvancedProcessTechnology	IRF International Rectifier	IRF
IRF2807ZS	文件：4.64052 Mbytes Page：12 Pages	AUTOMOTIVEMOSFETAdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF2807ZS	文件：272.67 Kbytes Page：12 Pages	AdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro	IRF International Rectifier	IRF
IRF2807ZS	文件：189.76 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IRF2807S-LF	IR	22+		6000	终端可免费供样,支持BOM配单	询价
深圳市创新迹电子有限公司	IRF2807S-LF	IR	23+		8000	专注配单,只做原装进口现货	询价
深圳市安富世纪电子有限公司	IRF2807S-LF	IR	23+		8000	专注配单,只做原装进口现货	询价
天津市博通航睿技术有限公司	IRF2807S-LF	IR	23+		7000		询价
深圳市威尔健半导体有限公司	IRF2807SMOS(场效应管)	IR	23+	TO-263-2	50000	全新原装正品现货,支持订货	询价
深圳市宝隆宏业科技有限公司	IRF2807SMOS(场效应管)	IR	2122+	0708	29860	全新原装正品,价格优势一片起售,可做含税	询价
深圳市粤科源兴科技有限公司	IRF2807SPBF	DISCRETE	50	IR	4500		询价
深圳市昌和盛利电子有限公司	IRF2807SPBF	IR	23+	TO-263	9896		询价
深圳市弘为电子有限公司	IRF2807SPBF	IR	16+	原厂封装	5000	原装现货假一罚十	询价
深圳市博浩通科技有限公司	IRF2807SPBF	IR	23+	TO-263	8000	专业优势供应	询价

更多IRF2807S-LF供应商更新时间2024-9-21 10:00:00

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