首页 >IRF2807PBF-CN>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

IRF2807S

AdvancedProcessTechnology

Description AdvancedMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,providesthede

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807S

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF2807S

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807S

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF2807S

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF2807SPBF

AdvancedProcessTechnologyUltraLowOn-Resistance

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807SPBF

HEXFETPowerMOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF2807STRLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807Z

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRF2807Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF2807Z

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807Z

AUTOMOTIVEMOSFETAdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807ZL

AUTOMOTIVEMOSFETAdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

KERSEMI

Kersemi Electronic Co., Ltd.

IRF2807ZL

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF2807ZL

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807ZL

AdvancedProcessTechnology

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRF2807ZLPBF

AUTOMOTIVEMOSFET(75V,94mOHM,75A)

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb

IRF

International Rectifier

IRF2807ZLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF2807ZPBF

AUTOMOTIVEMOSFET(75V,94mOHM,75A)

Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescomb

IRF

International Rectifier

IRF2807ZPBF

AdvancedProcessTechnology

IRF

International Rectifier

供应商型号品牌批号封装库存备注价格
IR
23+
TO-220
28000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
23+24
TO-220
39820
主营IR.原装原盘原盒、提供BOM一站式配单
询价
IR
23+
TO-220
50000
全新原装正品现货,支持订货
询价
IR
2022
TO-220
80000
原装现货,OEM渠道,欢迎咨询
询价
IR
23+
TO-220
90000
只做原装 全系列供应 价格优势 可开增票
询价
IR
22+
TO-220
32350
原装正品 假一罚十 公司现货
询价
IR
23+
TO-220
28000
原装正品
询价
IR
22+
TO-220
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO-220
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
IR
TO-220
6000
原装现货,长期供应,终端可账期
询价
更多IRF2807PBF-CN供应商 更新时间2024-9-20 17:11:00