首页 >IRF2804LPBF其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=40V RDS(on)=2.0mΩ ID=75A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionope | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
LINEARINTEGRATEDCIRCUIT | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
LINEARINTEGRATEDCIRCUIT | SamsungSamsung semiconductor 三星三星半导体 | Samsung |
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