首页 >IRF23N15DPBF>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PowerMOSFET(Vdss=150V,Rds(on)max=0.090ohm,Id=23A) Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) FullyCharacterizedAvalancheVoltageandCurrent Applications HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
HighfrequencyDC-DCconverters | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.09Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=150V,Rds(on)max=0.090ohm,Id=23A) Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) FullyCharacterizedAvalancheVoltageandCurrent Applications HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
N-Channel150V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
HEXFET짰PowerMOSFET | IRF International Rectifier | IRF | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET(Vdss=150V,Rds(on)max=0.090ohm,Id=23A) Benefits LowGate-to-DrainChargetoReduceSwitchingLosses FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) FullyCharacterizedAvalancheVoltageandCurrent Applications HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
HEXFET짰PowerMOSFET | IRF International Rectifier | IRF |
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