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IRF1310S

PowerMOSFET(Vdss=100V,Rds(on)=0.04ohm,Id=41A)

VDSS=100V RDS(on)=0.04Ω ID=41A Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatH

IRF

International Rectifier

IRFI1310G

PowerMOSFET(Vdss=100V,Rds(on)=0.04ohm,Id=22A)

VDSS=100V RDS(on)=0.04Ω ID=22A Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatH

IRF

International Rectifier

IRFI1310N

PowerMOSFET(Vdss=100V,Rds(on)=0.036ohm,Id=24A)

Through-HolePackags TO-220FullPak(FullyIsolated)

IRF

International Rectifier

IRFI1310N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFI1310NPBF

HEXFET짰PowerMOSFET

IRF

International Rectifier

IRFI1310NPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRFI1310NPBF

HEXFET짰PowerMOSFET

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IRFM1310ST

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

ISC-1310FB

Industrial1-portRS-232/422/485toFiberserialmediaconverter

ORING

ORing Industrial Networking Corp

ISC-1310FB-MM

Industrial1-portRS-232/422/485toFiberserialmediaconverter

ORING

ORing Industrial Networking Corp

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