首页 >IRF1104STRR>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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HEXFETPowerMOSFET VDSS=40V RDS(on)=0.008Ω ID=104A Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
Logic-LevelGateDrive VDSS=40V RDS(on)=0.008Ω ID=104A Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=40V RDS(on)=0.008Ω ID=104A Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
Logic-LevelGateDrive VDSS=40V RDS(on)=0.008Ω ID=104A Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
AdvancedProcessTechnologyLogic-LevelGateDrive VDSS=40V RDS(on)=0.008Ω ID=104A Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
Logic-LevelGateDrive VDSS=40V RDS(on)=0.008Ω ID=104A Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET VDSS=40V RDS(on)=0.008Ω ID=104A Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged | IRF International Rectifier | IRF | ||
SwitchingModePowerSupply | ISOCOMISOCOM COMPONENTS 英国安数光 | ISOCOM | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=110mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedUniversalSerialBustransceiver Generaldescription TheISP1104UniversalSerialBus(USB)transceiveriscompliantwiththeUniversalSerialBusSpecificationRev.2.0.TheISP1104cantransmitandreceiveUSBdataatfull-speed(12Mbit/s).ItallowssingleanddifferentialinputmodesselectablebyaMODEinput. Features ■ | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
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