IRF1104中文资料IRF数据手册PDF规格书

VDSS = 40V

RDS(on) = 0.009Ω

ID = 100A

描述 Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated