Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)

HEXFET® Power MOSFET VDSS = 100V RDS(on) = 0.16Ω ID = 14A

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IRF

Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)

HEXFET® Power MOSFET VDSS = 100V RDS(on) = 0.16Ω ID = 14A

文件：226.02 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=100V, Rds(on)=0.077ohm, Id=28A)

Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm

文件：222.74 Kbytes 页数：8 Pages

IRF

HEXFET POWER MOSFET ( VDSS=100V , RDS(on)=0.077廓 , ID=28A )

Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm Lead-Free

文件：1.12101 Mbytes 页数：9 Pages

IRF

HEXFET짰 Power MOSFET

文件：1.30865 Mbytes 页数：9 Pages

IRF

HEXFET power MOSFET.

Continuous drain current 28A @ Tc=25degC, Vgs=10V. Drain-to-source breakdown voltage 100V. Drain-to-source on-resistance 0.077Ohm

Infineon

英飞凌

HEXFET® Power MOSFET

Infineon

英飞凌

MOSFET N-CH 100V 28A TO-220-5

Vishay

威世科技