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836A	文件：97.67 Kbytes Page：6 Pages	SILICON28VHYPERABRUPTVARACTORDIODES Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.Featuring closelycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphase noiseperformance.Availableinsingleordualcommoncathodeformatinawiderageof miniaturesur	ZetexZetex Semiconductors 捷特科半导体	Zetex
836A	文件：334.62 Kbytes Page：8 Pages	Silicon25Vhyperabruptvaractordiodes Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Availableinsingleordualcommoncathodeformatinawiderageofminiaturesurfac	ZetexZetex Semiconductors 捷特科半导体	Zetex
836B	文件：334.62 Kbytes Page：8 Pages	Silicon25Vhyperabruptvaractordiodes Description Arangeofsiliconvaractordiodesforuseinfrequencycontrolandfiltering.FeaturingcloselycontrolledCVcharacteristicsandhighQ.Lowreversecurrentensuresverylowphasenoiseperformance.Availableinsingleordualcommoncathodeformatinawiderageofminiaturesurfac	ZetexZetex Semiconductors 捷特科半导体	Zetex
836B	文件：66.99 Kbytes Page：2 Pages	SurfaceMountZenerDiodes Features ●latHandlingSurfaceforAccuratePlacement ●tandardZenerBreakdownVoltageRange-3.3Vto68V ●owProfilePackage	KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司	KEXIN
836C-X	文件：78.79 Kbytes Page：2 Pages	83SERIESMOLDEDDIPTHRU-HOLEANDSURFACEMOUNTDRYREEDRELAYS [GORDOS] REEDRELAYS 83SERIESMOLDEDDIPTHRU-HOLEANDSURFACEMOUNTDRYREEDRELAYS	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
A836ERW	文件：196 Kbytes Page：2 Pages	LowCost,8WDIPWideInputRangeDC/DCConverters	MPD MPD (Memory Protection Devices)	MPD
ADG836	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836L	文件：418.4 Kbytes Page：16 Pages	0.5OHMCMOS1.65Vto3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836LisalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836Lisfullyspecifiedfor3.3V,2.5V,and1.8V	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836LYRM	文件：418.4 Kbytes Page：16 Pages	0.5OHMCMOS1.65Vto3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836LisalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836Lisfullyspecifiedfor3.3V,2.5V,and1.8V	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836LYRM-REEL	文件：418.4 Kbytes Page：16 Pages	0.5OHMCMOS1.65Vto3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836LisalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836Lisfullyspecifiedfor3.3V,2.5V,and1.8V	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YCP	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YCP-REEL	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YCP-REEL	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRM	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRM	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRM-REEL	文件：652.24 Kbytes Page：12 Pages	0.5CMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRM-REEL	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRMZ	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADG836YRMZ-REEL	文件：563.59 Kbytes Page：16 Pages	0.5ohmCMOS1.65VTO3.6VDualSPDT/2:1MUX GENERALDESCRIPTION TheADG836isalowvoltageCMOSdevicecontainingtwoindependentlyselectablesingle-pole,double-throw(SPDT)switches.Thisdeviceoffersultralowonresistanceoflessthan0.8Ωoverthefulltemperaturerange.TheADG836isfullyspecifiedfor3.3V,2.5V,and1.8Vsu	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD
ADUC836	文件：1.57008 Mbytes Page：80 Pages	MicroConverter,Dual16-BitADCswithEmbedded62kBFlashMCU	ADAnalog Devices 亚德诺亚德诺半导体技术有限公司	AD

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IR836	IR	22+	97	6000	终端可免费供样,支持BOM配单	询价
深圳市安富世纪电子有限公司	IR836	IR	23+	97	8000	只做原装现货	询价
深圳市博浩通科技有限公司	IR836G	IOR	23+	MSOP8	2500	特价库存	询价
深圳市鹏和科技有限公司	IR8363C/L437	EVERLIGHT	24+	NA	5000	全现原装公司现货	询价
深圳市福田区亿兴成电子商行	IR8363	IR		QFN	6698		询价
深圳市汇莱威科技有限公司	IR8363C/L437	EVERLIGHT/亿光		NA	265209	假一罚十原包原标签常备现货!	询价
深圳市威尔健半导体有限公司	IR8363C/L437	EVERLIGHT/亿光	23+	NA	50000	全新原装正品现货,支持订货	询价
京海半导体(深圳)有限公司	IR8363C/L437	EVERLIGHT/亿光	21+	NA	10000	原装现货假一罚十	询价
深圳廊盛科技有限公司	IR8363C/L437	EVERLIGHT/亿光	2022	NA	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市科恒伟业电子有限公司	IR8363C/L437	EVERLIGHT/亿光	21+	DIP-3	7540	只做原装正品假一赔十!正规渠道订货!	询价

更多IR836供应商更新时间2024-6-23 14:00:00

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