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MMDF3N03HD

DUALTMOSPOWERMOSFET4.1AMPERES30VOLTS

MediumPowerSurfaceMountProducts TMOSDualN-ChannelFieldEffectTransistors MiniMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocess.TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.Th

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MMDF3N03HD

PowerMOSFET3Amps,30Volts

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMDJ3N03BJT

PlasticPowerTransistorsSO??forSurfaceMountApplications

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMDJ3N03BJT

DUALBIPOLARPOWERTRANSISTORNPNSILICON30VOLTS3AMPERES

PlasticPowerTransistors SO–8forSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •Collector–EmitterSustainingVoltage—VCEO(sus) =30Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE =100Vdc(Min)@IC=1.0Adc =

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTSF3N03HD

SINGLETMOSPOWERMOSFET3.8AMPERES30VOLTSRDS(on)=0.040OHM

MediumPowerSurfaceMountProducts TMOSSingleN-ChannelFieldEffectTransistor Micro8devicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocesstoachievelowestpossibleon–resistancepersiliconarea.Theyarecapableofwithstandinghighener

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTSF3N03HD

PowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

SDT3N03

3.5A,30V,RDS(ON)55m(ohm)Dual-NEnhancementModeMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

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