首页 >IR3N03A>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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DUALTMOSPOWERMOSFET4.1AMPERES30VOLTS MediumPowerSurfaceMountProducts TMOSDualN-ChannelFieldEffectTransistors MiniMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocess.TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.Th | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
PowerMOSFET3Amps,30Volts | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PlasticPowerTransistorsSO??forSurfaceMountApplications | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
DUALBIPOLARPOWERTRANSISTORNPNSILICON30VOLTS3AMPERES PlasticPowerTransistors SO–8forSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •Collector–EmitterSustainingVoltage—VCEO(sus) =30Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE =100Vdc(Min)@IC=1.0Adc = | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
SINGLETMOSPOWERMOSFET3.8AMPERES30VOLTSRDS(on)=0.040OHM MediumPowerSurfaceMountProducts TMOSSingleN-ChannelFieldEffectTransistor Micro8devicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sHighCellDensityHDTMOSprocesstoachievelowestpossibleon–resistancepersiliconarea.Theyarecapableofwithstandinghighener | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
3.5A,30V,RDS(ON)55m(ohm)Dual-NEnhancementModeMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS |
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