High and Low Side Driver in Die form

Features •Floating channel designed for bootstrap operation •Fully operational to +1200 V •Tolerant to negative transient voltage •dV/dt immune •Gate drive supply range from 12 V to 20 V •Undervoltage lockout for both channels •3.3 V logic compatible •Separate logic supply range from 3.3 V

文件：1.05681 Mbytes 页数：16 Pages

IRF

High and Low Side Driver in Die form

Features •Floating channel designed for bootstrap operation •Fully operational to +1200 V •Tolerant to negative transient voltage •dV/dt immune •Gate drive supply range from 12 V to 20 V •Undervoltage lockout for both channels •3.3 V logic compatible •Separate logic supply range from 3.3 V

文件：1.05681 Mbytes 页数：16 Pages

IRF

1200 V high- and low-side gate driver IC bare die for IGBT and MOSFET

• Floating channel up to 1200 V\n• dV/dt immune\n• Undervoltage lockout for both channels\n• Logic supply range from 3.3 V to 20 V\n• Matched propagation delay for channels\n• Safely drive 110 Vac to 380 Vac apps\n• UVLO protection at low supply voltage\n \n\n\n;

Infineon

英飞凌

High and Low Side Driver

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

文件：1.20988 Mbytes 页数：18 Pages

IRF

High and Low Side Driver

文件：1.20988 Mbytes 页数：18 Pages

IRF

High and Low Side Driver

Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTT

文件：1.22362 Mbytes 页数：18 Pages

Infineon

英飞凌