| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
Forsurfacemountedapplications | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | SKTECHNOLGY | ||
SWITCHINGDIODE SOD-323Plastic-EncapsulateDiodes FEATURES ●VerySmallPlasticPackage ●HighSwitchingSpeed APPLICATIONS ●High-SpeedSwitchingine.g.SurfaceMountedCircuits | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
SurfaceMountSwitchingDiode FEATURES ●VerysmallplasticSMDpackage ●Highswitchingspeed:max.4ns ●Continuousreversevoltage:max.100V ●Repetitivepeakreversevoltage:max.100V ●Repetitivepeakforwardcurrent:max.500mA. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
200mWHighVoltageSMDSwitchingDiode FEATURES -Fastswitchingdevice(trr | TSCTaiwan Semiconductor Company, Ltd 台半 台湾半导体股份有限公司 | TSC | ||
HighSpeedSwitchingDiode400mW Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •SurfaceMountPackageIdeallySuitedforAutomaticInsertion •Highswitchingspeed:max.4ns •MoistureSensitivityLevel1 •Con | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
High-speedswitchingdiodes Generaldescription High-speedswitchingdiodes,encapsulatedinsmallSurface-MountedDevice(SMD)plasticpackages. Features ■Highswitchingspeed:trr≤4ns ■Lowcapacitance ■Lowleakagecurrent ■Reversevoltage:VR≤100V ■Repetitivepeakreversevoltage:VRRM≤1 | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
S0OD-323Plastic-EncapsulateDiodes FEATURES ®VerySmallPlasticPackage eHighSwitchingSpeed APPLICATIONS ®High-SpeedSwitchingine.g.SurfaceMountedCircuits | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
SwitchingDiodes | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
SwitchingDiodesSiliconEpitaxialPlanar | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
FastSwitchingSpeed | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
SiliconEpitaxialPlanarDiode | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
SWITCHINGDIODES DESCRIPTION The BAS316isavailableinSOD323package FEATURES Forsurfacemountedapplications GlassPassivatedChipJunction Fastreverserecoverytime AvailableinSOD323package MECHANICALDATA Case:SOD 323 Terminals:Solderab leperMILSTD750, Method2026 App | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | AITSEMI | ||
High-speedswitchingdiodes Featuresandbenefits Highswitchingspeed:trr4ns Lowleakagecurrent Repetitivepeakreversevoltage: VRRM100V AEC-Q101qualified Lowcapacitance Reversevoltage:VR100V SmallSMDplasticpackages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
High-speedswitchingdiode 1.Generaldescription High-speedswitchingdiode,encapsulatedinasmallSOD323(SC-76)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetitivepeakreve | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
High-SpeedSwitchingDiodes Features Vr100V IFav250mA | RFERFE international RFE国际公司RFE国际股份有限公司 | RFE | ||
SURFACEMOUNTFASTSWITCHINGDIODE SiliconEpitaxialPlanarDieConstruction FastSwitchingSpeed SurfaceMountPackageIdeallySuitedfor AutomaticInsertion ForGeneralPurposeSwitchingApplications PlasticMaterial–ULRecognitionFlammability Classification94V-0 | WTEWon-Top Electronics 毅星電子毅星电子股份有限公司 | WTE | ||
High-speedswitchingdiode 1.Generaldescription High-speedswitchingdiode,encapsulatedinasmallSOD323(SC-76)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetitivepeakreve | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
SWITCHINGDIODEVOLTAGE100VoltsCURRENT0.25Ampere | CHENMKOCHENMKO CHENMKO | CHENMKO | ||
HighSpeedSwitchingDiode | YANGJIEYangzhou yangjie electronic co., ltd 扬州扬杰电子扬州扬杰电子科技股份有限公司 | YANGJIE | ||
High-speedswitchingdiode 1.Generaldescription High-speedswitchingdiode,encapsulatedinasmallSOD323(SC-76)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetitivepeakreve | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
A |
b |
6 |
询价 | ||||
IR |
23+ |
TO-220 |
8000 |
原装正品 |
询价 | ||
IR |
22+ |
TO220 |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO220 |
8000 |
专注配单,只做原装进口现货 |
询价 | ||
IR |
23+ |
TO220 |
8000 |
只做原装现货 |
询价 |
相关规格书
更多- IQXT-316-1
- IQXT-316-3
- IQXT-316-5
- IQXT-316-7
- IQXT-316-9
- IQXT-317-1
- IQXT-317-3
- IQXT-318-1
- IQXT-318-11
- IQXT-318-13
- IQXT-318-3
- IQXT-318-5
- IQXT-318-7
- IQXT-318-9
- IQXT-351
- IQXV-110
- IQXV-190
- IQXV-21
- IQXV-30
- IQXV-32
- IQXV-42
- IQXV-50
- IQXV-52
- IQXV-56
- IQXV-60
- IQXV-63
- IQXV-81
- IQXV-84
- IQXV-86
- IQXV-88
- IQXV-90
- IQZ-HH27-BAT1
- IR01D214
- IR01D224
- IR01D420
- IR01H214
- IR01H224
- IR01H420
- IR01HD214
- IR-0210S
- IR-0212S
- IR-0213S
- IR-021CS
- IR-021DS
- IR-0220S
相关库存
更多- IQXT-316-2
- IQXT-316-4
- IQXT-316-6
- IQXT-316-8
- IQXT-317
- IQXT-317-2
- IQXT-318
- IQXT-318-10
- IQXT-318-12
- IQXT-318-2
- IQXT-318-4
- IQXT-318-6
- IQXT-318-8
- IQXT-350
- IQXV-100
- IQXV-120
- IQXV-20
- IQXV-22
- IQXV-31
- IQXV-41
- IQXV-43
- IQXV-51
- IQXV-55
- IQXV-57
- IQXV-61
- IQXV-80
- IQXV-83
- IQXV-85
- IQXV-87
- IQXV-89
- IQXV-93
- IQZ-HH27-CHARGER1
- IR01D214-P2
- IR01D224-P2
- IR01D420-P2
- IR01H214-P2
- IR01H224-P2
- IR01H420-P2
- IR-0210H
- IR-0212H
- IR-0213H
- IR-021CH
- IR-021DH
- IR-0220H
- IR-0222H
