BAS316/DG

Marking：KN；Package：SOD323；High-speed switching diode

1.Generaldescription High-speedswitchingdiode,encapsulatedinasmallSOD323(SC-76)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetitivepeakreve

BAS316/DG/B3,135

Package：SC-76，SOD-323；包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 100V 250MA SOD323

Nexperia USA Inc.

BAS316/DG/B4F

包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 100V 250MA

Nexperia USA Inc.

BAS316/DG/B4X

包装：管件 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 100V 250MA

Nexperia USA Inc.

BAS316-AU

SURFACEMOUNTSWITCHINGDIODES

Features Fastswitchingspeed. Verylowleakagecurrent Lowcapacitance SurfacemountpackageIdeallySuitedforAutomaticinsertion LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard AEC-Q101qualified

BAS316-HF

HighSpeedSwitchingDiodes

Features -Verysmallplasticpackage. -Highswitchingspeed.

BAS316PT

SWITCHINGDIODEVOLTAGE100VoltsCURRENT0.25Ampere

BAS316Q

HighSpeedSwitchingDiode

BAS316-Q

High-speedswitchingdiode

1.Generaldescription High-speedswitchingdiode,encapsulatedinasmallSOD323(SC-76)Surface-MountedDevice (SMD)plasticpackage. 2.Featuresandbenefits •Highswitchingspeed:trr≤4ns •Lowcapacitance •Lowleakagecurrent •Reversevoltage:VR≤100V •Repetitivepeakreve

BAS316RR

200mWHighVoltageSMDSwitchingDiode

FEATURES -Fastswitchingdevice(trr