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MR828

FastSilicon-Rectifiers

DiotecDIOTEC

德欧泰克

MR828

FastRecoveryRectifierDiodes

DiotecDIOTEC

德欧泰克

MR828

FastSiliconRectifiers

FEATURES •PlasticpackagehasUnderwritesLaboratoryFlammabilityClassification94V-0 •Fastswitchingspeed •Diffusedjunction •Highcurrentcapability •Hightemperaturesolderingguaranteed:250℃/10seconds,0.375(9.5mm)leadlength,5lbs.(2.3kg)tension.

TAYCHIPSTShenzhen Taychipst Electronic Co., Ltd

泰迪斯电子深圳市泰迪斯电子科技有限公司

MR828

Axialleaddiode

ForwardCurrent:5A ReverseVoltage:50to1000V Features •Max,soldertemperature:260°C •PlasticmaterialhasULclassification94V-0

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MR-828

MRserieselementsaredesignedforapplicationswherehighvibrationresistanceaswellashightemperaturestabilityarevital

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

MUR828

GLASSPASSIVATEDSUPERFASTRECTIFIER

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

MUR828

GLASSPASSIVATEDSUPERFASTRECTIFIER

FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Fastswitchingforhighefficiency •Lowforwardvoltagedrop •Singlerectifierconstruction •Highsurgecapability •Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolaritypro

JINGHENG

Jinan Jing Heng Electronics Co., Ltd.

MZ828

3WATTGLASSZENERDIODES

FEATURES ●Microminiaturepackage. ●Voidlesshermeticallysealedglasspackage. ●Triplelayerpassivation. ●Metallurgicallybonded. ●Highperformancecharacteristics. ●Stableoperationattemperatureto200°C ●Verylowthermalimpedance.

MicrosemiMicrosemi Corporation

美高森美美高森美公司

NTE828

IntegratedCircuitAudioPowerAmp,1.5W

Description: TheNTE828isanaudioamplifierina14–LeadDIPtypepackagedesignedforuseinmediumpowerconsumerapplications.Thegainisinternallysetto20tokeepexternalpartcountlow,buttheadditionofanexternalresistorandcapacitorbetweenPin2andPin6willincreasethegain

NTE

NTE Electronics, Inc

OPA828

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-VJFET-Input,OperationalAmplifiers

1Features •Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz •Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS •Lowinputbiascurrent:1pA •Inputoffsetvoltage:50μV •Inputoffsetdrift:0.45μV/°C •MUX-friendlyinputs •Gainbandwidth:45MHz •Slewrate:150V/μs •14-bitse

TITexas Instruments

德州仪器美国德州仪器公司

OPA828

Low-Offset,Low-Drift,Low-Noise,50-MHz,36-VJFET-InputOperationalAmplifier

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

OPA828

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-V,JFET-InputOperationalAmplifiers

1Features •Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz •Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS •Lowinputbiascurrent: –0.1pA(DGN) –1pA(D) •Inputoffsetvoltage: –25μV(DGN) –50μV(D) •Inputoffsetdrift: –0.2μV/°C(DGN) –0.45μV/°C(D) •MUX-friend

TITexas Instruments

德州仪器美国德州仪器公司

OPA828ID

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-V,JFET-InputOperationalAmplifiers

1Features •Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz •Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS •Lowinputbiascurrent: –0.1pA(DGN) –1pA(D) •Inputoffsetvoltage: –25μV(DGN) –50μV(D) •Inputoffsetdrift: –0.2μV/°C(DGN) –0.45μV/°C(D) •MUX-friend

TITexas Instruments

德州仪器美国德州仪器公司

OPA828ID

Low-Offset,Low-Drift,Low-Noise,50-MHz,36-VJFET-InputOperationalAmplifier

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

OPA828ID

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-VJFET-Input,OperationalAmplifiers

1Features •Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz •Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS •Lowinputbiascurrent:1pA •Inputoffsetvoltage:50μV •Inputoffsetdrift:0.45μV/°C •MUX-friendlyinputs •Gainbandwidth:45MHz •Slewrate:150V/μs •14-bitse

TITexas Instruments

德州仪器美国德州仪器公司

OPA828IDGNR

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-V,JFET-InputOperationalAmplifiers

1Features •Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz •Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS •Lowinputbiascurrent: –0.1pA(DGN) –1pA(D) •Inputoffsetvoltage: –25μV(DGN) –50μV(D) •Inputoffsetdrift: –0.2μV/°C(DGN) –0.45μV/°C(D) •MUX-friend

TITexas Instruments

德州仪器美国德州仪器公司

OPA828IDGNT

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-V,JFET-InputOperationalAmplifiers

1Features •Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz •Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS •Lowinputbiascurrent: –0.1pA(DGN) –1pA(D) •Inputoffsetvoltage: –25μV(DGN) –50μV(D) •Inputoffsetdrift: –0.2μV/°C(DGN) –0.45μV/°C(D) •MUX-friend

TITexas Instruments

德州仪器美国德州仪器公司

OPA828IDR

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-V,JFET-InputOperationalAmplifiers

1Features •Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz •Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS •Lowinputbiascurrent: –0.1pA(DGN) –1pA(D) •Inputoffsetvoltage: –25μV(DGN) –50μV(D) •Inputoffsetdrift: –0.2μV/°C(DGN) –0.45μV/°C(D) •MUX-friend

TITexas Instruments

德州仪器美国德州仪器公司

OPA828IDR

OPAx828Low-Offset,Low-Drift,Low-Noise,45-MHz,36-VJFET-Input,OperationalAmplifiers

1Features •Lowinputvoltagenoisedensity: 4nV/√Hzat1kHz •Inputvoltagenoise: 0.1Hzto10Hz:60nVRMS •Lowinputbiascurrent:1pA •Inputoffsetvoltage:50μV •Inputoffsetdrift:0.45μV/°C •MUX-friendlyinputs •Gainbandwidth:45MHz •Slewrate:150V/μs •14-bitse

TITexas Instruments

德州仪器美国德州仪器公司

OPA828IDR

Low-Offset,Low-Drift,Low-Noise,50-MHz,36-VJFET-InputOperationalAmplifier

TI1Texas Instruments(TI)

德州仪器德州仪器 (TI)

供应商型号品牌批号封装库存备注价格
A
b
6
询价
IR
23+
TO-220
8000
原装正品
询价
IR
22+
TO220
6000
终端可免费供样,支持BOM配单
询价
IR
23+
TO220
8000
专注配单,只做原装进口现货
询价
IR
23+
TO220
8000
只做原装现货
询价
更多IQXO-828供应商 更新时间2024-6-18 16:30:00