OptiMOS짰2 Power-Transistor

文件：527.53 Kbytes 页数：11 Pages

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OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

文件：413.69 Kbytes 页数：11 Pages

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英飞凌

OptiMOS® 2 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

文件：408.69 Kbytes 页数：11 Pages

INFINEON

英飞凌

OptiMOS짰2 Power-Transistor

文件：527.53 Kbytes 页数：11 Pages

INFINEON

英飞凌

OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

文件：413.69 Kbytes 页数：11 Pages

INFINEON

英飞凌