丝印：082N10NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.07489 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：082N10NS；Package：PG-TO220-3；StrongIRFETTM 2 Power-Transistor

文件：1.10419 Mbytes 页数：11 Pages

INFINEON

英飞凌

StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.07489 Mbytes 页数：11 Pages

INFINEON

英飞凌

StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

文件：1.07489 Mbytes 页数：11 Pages

INFINEON

英飞凌

StrongIRFET ™ 2 单 N 沟道功率 MOSFET 100 V，采用 TO-220 封装

\n优势:\n• Multi-vendor compatibility\n• Right-fit products\n• Supports a wide variety of applications\n• Standard pinout allows for drop-in replacement\n• Increased current carrying capability\n• Ease of manufacturing;

Infineon

英飞凌