| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>IPI023NE7N>芯片详情
IPI023NE7N_INFINEON/英飞凌_MOSFET N-Channel 75V MOSFET博通航睿技术
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 制造商编号
:IPI023NE7N
- 生产厂家
:英飞凌
- 技术
:MOSFET(金属氧化物)
- 漏源电压(Vdss)
:75V
- 电流 - 连续漏极(Id)(25°C 时)
:120A(Tc)
- 不同 Id,Vgs 时的 Rds On(最大值)
:2.3 毫欧 @ 100A,10V
- 不同 Id 时的 Vgs(th)(最大值)
:3.8V @ 273µA
- 不同 Vgs 时的栅极电荷 (Qg)(最大值)
:206nC @ 10V
- 不同 Vds 时的输入电容(Ciss)(最大值)
:14400pF @ 37.5V
- FET 功能
:-
- 功率耗散(最大值)
:300W(Tc)
- 工作温度
:-55°C ~ 175°C(TJ)
- 安装类型
:通孔
- 供应商器件封装
:PG-TO262-3
- 封装/外壳
:TO-262-3,长引线,I²Pak,TO-262AA
相近型号
- IPI024N06N3G
- IP-HAM-EM
- IPI024N06N3GE8214
- IP-HAMD-CM-02
- IPI024N06N3GHKSA1
- IP-HAMD-CM
- IPI024N06N3GIC
- IP-HAM-CU-03
- IP-HAM-CU
- IPI024N06N3GS
- IP-HAM-CMS
- IPI024N06N3GXKSA1
- IP-HAM-CM-01
- IPI024N06NG
- IP-HAM-CM/S
- IPI028N08N3
- IP-HAM-CM
- IPI028N08N3G
- IPH3225M682T
- IPI028N08N3GHKSA1
- IPH3225M472T
- IPI029N06N
- IPH3225M332T
- IPI029N06NAKSA1
- IPH3225M222T
- IPI029N06NG
- IPH3225M103T
- IPI030N10N3
- IPH2520M682T
- IPI030N10N3G
- IPH2520M472T
- IPI030N10N3GHKSA1
- IPH2520M332T
- IPI030N10N3GXKSA1
- IPH2520M222T
- IPH2520M103T
- IPI032N06N3
- IPH2520M102T
- IPI032N06N3G
- IPH2001IR
- IPH-18GM-V1
- IPI032N06N3GAKSA1
- IPGH1116620390V
- IPGH1116220390V
- IPI032N08N3G
- IPGH111-1-62-303-00
- IPI033NE7N
- IP-GAL002-002/514-2Z
- IPI033NE7NG
- IPI034NE7N



