丝印：60R065S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 65mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • Kelvin Source pin improves switching performance at high current • QDPAK (PG-HDSOP-22-1) offers top side coo

文件：1.02306 Mbytes 页数：14 Pages

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英飞凌

低 RDS(on) 600V SJ MOSFET，采用高效的顶部冷却 QDPAK，非常适合低频开关应用和固态解决方案

\n优势:\n• Minimizes conduction losses\n• Increases energy efficiency\n• More compact and easier designs\n• Eliminates or reduces heat sinks in solid-state design\n• Lower TCO cost or BOM cost;

Infineon

英飞凌

600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 65mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • TO220 package with total Pb-free die attach Benefits • Minimized conduction losses (eliminate / reduce he

文件：842.89 Kbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolMOS짧 SJ S7 Power Device

文件：1.08329 Mbytes 页数：14 Pages

INFINEON

英飞凌