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IPD65R600E6中文资料英飞凌数据手册PDF规格书
IPD65R600E6规格书详情
描述 Description
CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM DE series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
特性 Features
● Extremely low losses due to very low F O M R dson*Qg and E oss
● Very high commutation ruggedness
● Easy to use/drive
● JEDEC1) qualified, Pb-free plating, available in Halogen free mold compound 2)
Applications
PFC stages, hard switching PWM stages and resonant switching PWM stages
e.g. PC Silverbox, Adapter, LCD & PDP TV, Lightning, Server, Telecom and UPS.
产品属性
- 型号：
IPD65R600E6
- 功能描述：
MOSFET N-CH 700V 7.3A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
询价 | ||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
Infineon(英飞凌) |
23+ |
PG-TO252-3 |
19850 |
原装正品,假一赔十 |
询价 | ||
INFINEON/英飞凌 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
询价 | |||
INFINEON |
25+ |
TO-252 |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
INFINEON/英飞凌 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
INFINEON |
25+23+ |
TO-252 |
34619 |
绝对原装正品全新进口深圳现货 |
询价 | ||
Infineon/英飞凌 |
24+ |
PG-TO252-3 |
25000 |
原装正品,假一赔十! |
询价 | ||
INFINEON |
23+ |
TO-252 |
3824 |
原厂原装正品 |
询价 |
