首页 >IPD65R600E6>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IPD65R600E6 | N-Channel MOSFET Transistor •DESCRITION •Fastswitching •Veryhighcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
IPD65R600E6 | 650V CoolMOS E6 Power Transistor Description CoolMOSTMisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSTMDEseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresultin | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
IPD65R600E6 | Metall Oxide Semiconductor Field Effect Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •Veryhighcommutationruggedness •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MetallOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
650VCoolMOSE6PowerTransistor Description CoolMOSTMisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSTMDEseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresultin | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingSJMOSFETwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.6Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MetallOxideSemiconductorFieldEffectTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
详细参数
- 型号：
IPD65R600E6
- 功能描述：
MOSFET N-CH 700V 7.3A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
20+ |
TO-252 |
16300 |
终端可免费提供样品,欢迎咨询 |
询价 | ||
Infineon(英飞凌) |
24+ |
标准封装 |
8011 |
原厂渠道供应,大量现货,原型号开票。 |
询价 | ||
INFINEON |
SOT-252 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
询价 | |||
INFINEON/英飞凌 |
24+ |
SOT-252 |
16895 |
原装进口假一罚十 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO-252 |
3880 |
只做原厂渠道 可追溯货源 |
询价 | ||
Infineon(英飞凌) |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
TO-252 |
12000 |
勤思达 只做原装 现货库存 |
询价 | ||
英飞翎 |
17+ |
DPAK(TO-252) |
31518 |
原装正品 可含税交易 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
TO-252 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
INFINEON/英飞凌 |
24+ |
TO-252 |
17400 |
全新原装现货 |
询价 |
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