RS1G201ATTB1，MOSFET PCH -40V -78A.
制造商: ROHM Semiconductor
产品种类: MOSFET
技术: Si
安装风格: SMD/SMT
封装 / 箱体: HSOP-8
晶体管极性: P-Channel
通道数量: 1 Channel
Vds-漏源极击穿电压: 40 V
Id-连续漏极电流: 78 A
Rds On-漏源导通电阻: 5.2 mOhms
Vgs - 栅极-源极电压: - 20 V, + 20 V
Vgs th-栅源极阈值电压: 1 V
Qg-栅极电荷: 130 nC
最大工作温度: + 150 C
Pd-功率耗散: 40 W
通道模式: Enhancement
商标: ROHM Semiconductor
配置: Single
下降时间: 250 ns
产品类型: MOSFET
上升时间: 98 ns
MOSFETs
晶体管类型: 1 P Channel
典型关闭延迟时间: 330 ns
典型接通延迟时间: 24 ns
单位重量: 771.020 mg
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TPS2120YFPT
TLV2211IDBVR
IPD50P04P4L-11
TPS53513RVER
STM32F402VCT6
STM32F205ZET6
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STM32F103RET6TR
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IAUC120N04S6N013
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LM5001MAXPB
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ICM-42670-P
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SAK-TC377TP-96F300S AA
SAK-TC399XP-256F300S BD
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LT6703HVCS5-2#TRMPBF
ADS1015IDGSR
LM2675MX-5.0PB
UCC28950QPWRQ1
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ICM-42670-P
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