Manufacturer: Toshiba
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220FP-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 10 A
Rds On - Drain-Source Resistance: 750 mOhms
Vgs th - Gate-Source Threshold Voltage: 4 V
Vgs - Gate-Source Voltage: 30 V
Qg - Gate Charge: 25 nC
Configuration: Single
Tradename: DTMOSIV
Height: 15 mm
Length: 10 mm
Series: TK10A60D
Transistor Type: 1 N-Channel
Type: Field Effect Transistor Silicon N Channel MOS Type
Width: 4.5 mm
Brand: Toshiba
Fall Time: 100 ns
Pd - Power Dissipation: 45 W
Rise Time: 55 ns
Factory Pack Quantity: 2500
Typical Turn-Off Delay Time: 15 ns
Typical Turn-On Delay Time: 22 ns
Unit Weight: 0.211644 oz
