Features
Order code V DS RDS(on) max ID
STL210N4F7AG 40 V 1.6 mΩ 120 A
Designed for automotive applications and
AEC-Q101 qualified
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Wettable flank package
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low onstate
resistance, while also reducing internal
capacitance and gate charge for faster an
