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RUICHIPS代理 RU75N08R

2024-8-8 9:02:00
  • RUICHIPS代理商 深圳世联科技专业代理RUICHIPS得MOS管RU75N08 RUICHIPS代理联系电话 13828760986赵 RUICHIPS代理在线咨询 QQ 2677332671 RU75N08R3 的规范如下 Features Pin Description Applications Note:* Current limited by Safe operating area. Symbol Para

RUICHIPS代理商 深圳世联科技专业代理RUICHIPS得MOS管RU75N08

RUICHIPS代理联系电话 13828760986赵

RUICHIPS代理在线咨询 QQ 2677332671

RU75N08R3 的规范如下

Features Pin

Description Applications Note:* Current limited by Safe operating area. Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 75 VGSS Gate-Source Voltage ±25 V TJ Maximum Junction Temperature 175 °C TSTG Storage Temperature Range -55 to 175 °C IS Diode Continuous Forward Current TC=25°C 80 A Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TC= 25°C 360* A TC= 25°C 80 ID Continuous Drain Current TC=100°C 76 A TC=25°C 280 PD Maximum Power Dissipation TC=100°C 140 W RθJC Thermal Resistance-Junction to Case 0.5 °C/W Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed (L=2mH) 1.2 J • 75V/80A, RDS (ON) =8mΩ VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/dt capability • Fast Switching and Fully Avalanche Rated • 100% avalanche tested • 175°C Operating Temperature • Lead Free and Green Available • Switching Application Systems Absolute Maximum Ratings TO-220 TO-220F TO-263 TO-247 N-Channel MOSFE

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Copyright ©RUCHIPS Semiconductor Co., Ltd Rev.C – MAR. 2009 2 www.MOSFET.cc www.RUICHIPS.com RU75N08 Electrical Characteristics (TA=25°C Unless Otherwise Noted)

RU75N08 Symbol Parameter Test Condition Min.Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250μA 75 V VDS= 70V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current TJ=85°C 30 μA VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250μA 2 3 4 V IGSS Gate Leakage Current VGS=±25V, VDS

=0V ±100 μA RDS(ON) a Drain-Source On-state Resistance VGS= 10V, IDS= 40A 8 11 mΩ Notes: a 、 Pulse test Pulse width≤300μs, duty cycle≤2%. b 、Guaranteed by design, not subject to production testing. Diode Characteristics VSDa Diode Forward Voltage ISD=20 A, VGS=0V 0.83 1.2 V trr Reverse Recovery Time 50 ns qrr Reverse Recovery Charge ISD=40A, dlSD/dt=100A/μs 110 nC Dynamic Characteristics b RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.4 Ω Ciss Input Capacitance 3400 Coss Output Capacitance 450 Crss Reverse Transfer Capacitance VGS=0V, VDS= 30V, Frequency=1.0MHz 170 pF td(ON) Turn-on Delay Time 22 4

RU70E15L RU7088R RU75N08R RU7550R

RU75N08S RU7550S RU7588R RU190N08R RU8048R RU8048S RU190N08Q

RU80100R RU80190R RU8099R RU1H190R RU1H80R RU3710S RU190N10R

RU140N10R RU1H100R RU3710R RU190N10S RU1HE3D RU1HC2H RU1HE4H

RU1H35L RU1HE4D RU1H35R RU1HE16L RU1HE3H RU1088R RU190N10Q

RU1HE12L RU1H35S RU80N15Q RU80N15R RU2HE5L RU2H50Q RU120N15Q

RU2HE2D RU2H30Q RU6H10R RU6H10P RU6Z10R RU120N15R U30S5H

RU20P4C RU20D10H RU2013H RU2520H RU2560L

RU2568L RU3013H RU30D10H RU30160R RU3060L RU30D8H RU30230R

RU3020H RU3568L RU30120R RU3060K RU3010H RU30120L RU3568R

RU30300R RU4099R RU3560L RU40280R RU40150R RU40120R RU4068L

RU35122R RU3582R RU4099Q RU3582S RU40220R RU3520H RU35122S

RU60E16L RU60101R RU6055S RU6055L RU60E5D RU60E6H RU6199Q

RU60100R RU60200R RU6199R RU60E6D RU60E5H RU60120R RU6080L