FET Type MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 38A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 1.6 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 1.9V @ 250µA
Gate Charge (Qg) @ Vgs 29nC @ 4.5V
Input Capacitance (Ciss) @ Vds 4100pF @ 12.5V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad
Supplier Device Package 8-SON
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