CSD13303W1015
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 31A (Ta)
Rds On (Max) @ Id, Vgs 20 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) @ Vgs 4.7nC @ 4.5V
Input Capacitance (Ciss) @ Vds 715pF @ 6V
Power - Max 1.65W
Mounting Type Surface Mount
Package / Case 6-UFBGA, DSBGA
Supplier Device Package 6-DSBGA
■■正品原装 哥健科技■■ 专业于芯！诚信用心！
深圳市哥健科技有限公司
热销电话：0755-23901172
邮 箱：gejian_tech@163.com
QQ:205961440
■■原装正品 哥健科技■■
