触控

集成ARM M0核提供64K Flash以及8K SRAM内置高压LDO，支持6V到18V输入电压范围内置 LIN 从机16路GPIO，支持 UART、I2C、PWM、ADC、电容触控支持触控唤醒时功耗低至60uA支持QFN24 4*4mm封装主要应用: 触控阅读灯，触控门把手，开关按键面板等

Indiemicro

英迪芯微

CSD87501L 30-V Dual Common Drain N-Channel NexFET™ Power MOSFET

1 Features 1• Low on-resistance • Small footprint of 3.37 mm × 1.47 mm • Ultra-low profile – 0.2-mm high • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection • USB Type-C / PD 3 Description This 30-V, 6.6-mΩ, 3.

文件：1.03668 Mbytes 页数：13 Pages

TI

德州仪器

CSD87501L 30 V Dual Common Drain N-Channel NexFET Power MOSFET

文件：896.01 Kbytes 页数：12 Pages

TI

德州仪器

CSD87501L 30-V Dual Common Drain N-Channel NexFET™ Power MOSFET

1 Features 1• Low on-resistance • Small footprint of 3.37 mm × 1.47 mm • Ultra-low profile – 0.2-mm high • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection • USB Type-C / PD 3 Description This 30-V, 6.6-mΩ, 3.

文件：1.03668 Mbytes 页数：13 Pages

TI

德州仪器