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IRFM240

POWERMOSFETTHRU-HOLE(TO-254AA)

200V.N-CHANNEL Features: ■SimpleDriveRequirements ■EaseofParalleling ■HermeticallySealed ■ElectricallyIsolated ■Dynamicdv/dtRating ■Light-weight

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRFM240

POWERMOSFETTHRU-HOLE

200V,N-CHANNELHEXFET®MOSFETTECHNOLOGY HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofth

IRF

International Rectifier

IRFM240

SimpleDriveRequirements

IRF

International Rectifier

IRFN240

POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.18ohm,Id=18A)

POWERMOSFETSURFACEMOUNT(SMD-1) HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRF

International Rectifier

IRFN240

SimpleDriveRequirements

IRF

International Rectifier

IRFN240SMD

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP240

20A,200V,0.180Ohm,N-ChannelPowerMOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFP240

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=20A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRF

International Rectifier

IRFP240

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclu

VishayVishay Siliconix

威世科技威世科技半导体

IRFP240

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage-:VDSS=200V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.18Ω(Max) •FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
TI(德州仪器)
24+
-
22048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
TI/德州仪器
2022+
TSSOP8
48000
只做原装,绝对原装,假一罚十
询价
TI/美国德州仪器
23+
TSSOP8
5000
公司只做原装,可配单
询价
TI(德州仪器)
24+
NA/
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
TI/德州仪器
2022+
TSSOP8
48000
只做原装,原装,假一罚十
询价
TI(德州仪器)
23+
-
13650
公司只做原装正品,假一赔十
询价
TI
24+
con
35960
查现货到京北通宇商城
询价
TI/德州仪器
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
询价
TI/德州仪器
25+
原厂封装
10280
询价
TI(德州仪器)
2511
-
4945
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
更多INA240PMPWPSEP供应商 更新时间2025-7-28 17:00:00