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IRFP460LC

iscN-ChannelMOSFETTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrent–ID=20A@TC=25℃ •DrainSourceVoltage- :VDSS=500V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.27Ω(Max) •FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFP460LC

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFP460LCPBF

HEXFETPowerMOSFET

Description ThisnewseriesofLowChargeHEXFETPowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedHexfettechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

IRF

International Rectifier

IRFP460LCPBF

PowerMOSFET

DESCRIPTION ThisnewseriesoflowchargePowerMOSFETsachievesignificantlylowergatechargeoverconventionalMOSFETs.UtilizingadvancedPowerMOSFETstechnologythedeviceimprovementsallowforreducedgatedriverequirements,fasterswitchingspeedsandincreasedtotalsystemsavings.The

VishayVishay Siliconix

威世科技威世科技半导体

IRFP460LCPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

IRFP460N

PowerMOSFET(Vdss=500V,Rds(on)max=0.24ohm,Id=20A)

SMPSMOSFET Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent EffectiveCossspecified(SeeAN1001) Applications SwitchModePowerSupply

IRF

International Rectifier

IRFP460N

PowerMOSFET

PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS

VishayVishay Siliconix

威世科技威世科技半导体

IRFP460NPBF

HEXFETPowerMOSFET

Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterru

IRF

International Rectifier

IRFP460NPBF

PowerMOSFET

PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS

VishayVishay Siliconix

威世科技威世科技半导体

IRFP460P

PowerMOSFET(Vdss=500V,Rds(on)=0.27ohm,Id=20A)

Description ThirdGenerationHEXFET®sfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevel

IRF

International Rectifier

详细参数

  • 型号:

    IN460DFS

  • 制造商:

    Hubbell Wiring Device-Kellems

  • 功能描述:

    PS, IEC, REPL, INTERIOR, 4W, 60A

供应商型号品牌批号封装库存备注价格
SERTECH
24+
35
只做进口原装假一罚十公司现货
询价
SERTECH
23+
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
INTEGRAL
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
ST
24+
DIP
200000
原装进口正口,支持样品
询价
ST
24+
DIP
16900
支持样品,原装现货,提供技术支持!
询价
ST
25+
DIP
16900
原装,请咨询
询价
ST
2511
DIP
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
ST
21+
DO-41
10000
原装现货假一罚十
询价
ST
24+
DIPSMD
100000
询价
ST/意法
23+
DO-41
50000
全新原装正品现货,支持订货
询价
更多IN460DFS供应商 更新时间2025-7-24 13:54:00