IRF350

TRANSISTORSN-CHANNEL(Vdss=400V,Rds(on)=0.300ohm,Id=14A)

TheHEXFET®technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddi

IRF350

N-CHANNELPOWERMOSFET

IRF350

iscN-ChannelMOSFETTransistor

IRF350

N-CHANNELPOWERMOSFETS

IRFC350

N-ChannelEnhancementModeHighRuggednessSeries

IRFM350

N-CHANNELPOWERMOSFET

IRFM350

POWERMOSFETTHRU-HOLE(TO-254AA)

PartNumberRDS(on)ID IRFM3500.315Ω14A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransis

IRFM350

SimpleDriveRequirements

IRFN350

POWERMOSFETN-CHANNEL(BVdss=400V,Rds(on)=0.315ohm,Id=14A)

RDS(on)0.315Ω ID14A HEXFET®MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establi

IRFN350

SimpleDriveRequirements