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IMW65R007M2H中文资料CoolSiC ™ MOSFET 650 V G2，采用 TO-247-3 封装数据手册Infineon规格书
IMW65R007M2H规格书详情
描述 Description
CoolSiC™ MOSFET 650 V G2 in TO-247-3 package
特性 Features
• Excellent figures of merit (FOMs)
• Single-digit RDS(on)in TO-247
• Best in class RDS(on)
• High robustness and overall quality
• Support for unipolar driving (Vgsoff=0)
• Best immunity against turn-on effects
• Improved package interconnect with .XT
优势:
• Enables BOM savings
• Maximizes the system performance per $
• Highest reliability
• Enables top efficiency and power density
• Ease-of-use
• Full compatibility with existing vendors
• Allows designs without fan or heatsink
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
询价 | ||
Infineon(英飞凌) |
24+ |
TO247 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
Infineon(英飞凌) |
23+ |
19850 |
原装正品,假一赔十 |
询价 | |||
Infineon/英飞凌 |
2021+ |
PG-TO247-3 |
9600 |
原装现货，欢迎询价 |
询价 | ||
Infineon/英飞凌 |
23+ |
PG-TO247-3 |
12700 |
买原装认准中赛美 |
询价 | ||
Infineon/英飞凌 |
24+ |
PG-TO247-3 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
Infineon/英飞凌 |
24+ |
PG-TO247-3 |
8000 |
只做原装，欢迎询价，量大价优 |
询价 | ||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
Infineon/英飞凌 |
24+ |
PG-TO247-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
Infineon/英飞凌 |
21+ |
PG-TO247-3 |
6820 |
只做原装,质量保证 |
询价 |
