首页>IMW120R007M1H>规格书详情
IMW120R007M1H中文资料CoolSiC ™ 1200 V、7 mΩ SiC 沟槽 MOSFET，采用 TO247-3 封装数据手册Infineon规格书
IMW120R007M1H规格书详情
特性 Features
优势:
• Highest efficiency
• Reduced cooling effort
• Higher frequency operation
• Increased power density
• Reduced system complexity
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
25 |
PG-TO247-3 |
6000 |
原装正品 |
询价 | ||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 | ||
Infineon(英飞凌) |
24+ |
TO247 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
INFINEON/英飞凌 |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
INFINEON/英飞凌 |
21+ |
NA |
1773 |
只做原装,一定有货,不止网上数量,量多可订货! |
询价 | ||
Infineon(英飞凌) |
23+ |
PG-TO247-3 |
19850 |
原装正品,假一赔十 |
询价 | ||
Infineon/英飞凌 |
2021+ |
PG-TO247-3 |
9600 |
原装现货，欢迎询价 |
询价 | ||
Infineon/英飞凌 |
23+ |
PG-TO247-3 |
12700 |
买原装认准中赛美 |
询价 | ||
Infineon/英飞凌 |
24+ |
PG-TO247-3 |
30000 |
原装正品公司现货,假一赔十! |
询价 | ||
Infineon/英飞凌 |
24+ |
PG-TO247-3 |
8000 |
只做原装，欢迎询价，量大价优 |
询价 |
