General purpose (dual digital transistors)

Features 1) Two DTC323T chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference.

文件：63.26 Kbytes 页数：4 Pages

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Dual Bias Resistor Transistor

Dual Bias Resistor Transistor NPN Surface Mount • Low VCC (sat) 80 mV max at IC/IB = 50 mA/2.5 mA • High Current: IC = 600 mA max • Lead Free Plating

文件：23.79 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Dual Bias Resistor Transistor

Dual Bias Resistor Transistor NPN Surface Mount • Low VCC (sat) 80 mV max at IC/IB = 50 mA/2.5 mA • High Current: IC = 600 mA max • Lead Free Plating

文件：23.79 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Dual Bias Resistor Transistor

Dual Bias Resistor Transistor NPN Surface Mount • Low VCC (sat) 80 mV max at IC/IB = 50 mA/2.5 mA • High Current: IC = 600 mA max • This is a Pb−Free Device

文件：30.03 Kbytes 页数：2 Pages

ONSEMI

安森美半导体

丝印：H21；Package：SOT-26；Dual digital transistors

Features In addition to the features of regular digital transistors. 1) Low saturation voltage, typically VCE (sat)=40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 2) These transistors can be used at high current levels, IC=600mA. 3) Two DTC614T chips in a SMT

文件：64.41 Kbytes 页数：3 Pages

ROHM

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丝印：H22；Package：SMT6；Dual digital transistors

Features In addition to the features of regular digital transistors. 1) Low saturation voltage, typically VCE (sat)=40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 2) These transistors can be used at high current levels, IC=600mA. 3) Two DTC663E chips in a SMT

文件：70.04 Kbytes 页数：4 Pages

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丝印：H23；Package：SOT-26；Dual digital transistors

Features 1) Built-In Biasing Resistors 2) Two DTC643T chips in one package. 3) Low saturation voltage, typically VCE(sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 4) These transistors can be used at high current levels, IC=600mA. 5) Built-in bias resis

文件：64.42 Kbytes 页数：3 Pages

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丝印：H23；Package：SOT-26；Dual digital transistors

Features 1) Built-In Biasing Resistors 2) Two DTC643T chips in one package. 3) Low saturation voltage, typically VCE(sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 4) These transistors can be used at high current levels, IC=600mA. 5) Built-in bias resis

文件：57.54 Kbytes 页数：3 Pages

ROHM

罗姆

Dual digital transistors

Features 1) Built-In Biasing Resistors 2) Two DTC643T chips in one package. 3) Low saturation voltage, typically VCE(sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 4) These transistors can be used at high current levels, IC=600mA. 5) Built-in bias resis

文件：57.54 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：H24；Package：SMT6；Dual digital transistors

Features In addition to the features of regular digital transistors. 1) Low saturation voltage, typically VCE (sat)=40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits. 2) These transistors can be used at high current levels, IC=600mA. 3) Two DTC623T chips in a SMT

文件：64.53 Kbytes 页数：3 Pages

ROHM

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