丝印：65R083M1；Package：PG-TO263-7-12；650 V CoolSiC짧 M1 SiC Trench Power Device

文件：1.53953 Mbytes 页数：15 Pages

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包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：SILICON CARBIDE MOSFET PG-TO263-

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MOSFET 650 V CoolSiCª M1 SiC Trench Power Device

Features • Optimized switching behavior at higher currents • Commutation robust fast body diode with low Qf • Superior gate oxide reliability • Tj,max=175°C and excellent thermal behavior • Lower RDS(on) and pulse current dependency on temperature • Increased avalanche capability • Compatib

文件：1.43006 Mbytes 页数：15 Pages

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650 V CoolSiC짧 M1 SiC Trench Power Device

文件：1.36005 Mbytes 页数：15 Pages

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650 V CoolSiC짧 M1 SiC Trench Power Device

文件：1.37512 Mbytes 页数：15 Pages

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