IKZ75N65ES5中文资料650 V、75 A IGBT，带反并联二极管，采用 TO-247 封装数据手册Infineon规格书

描述 Description

To further enhance the best-in-class performance of the TRENCHSTOP™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP™ 5 IGBT to the next level of best in class switching performance. The standard TO-247 package body has been taken and an extra, 4th pin, has been added to enable the Kelvin emitter configuration.

特性 Features

• Very low control inductance loop
• Extra emitter pin, the forth package pin, for driver feedback
• Same creepage distance of collector emitter as standard TO-247 package

优势:
• Over 20% total switching loses reduction compared to standard TO-247-3
• System efficiency improvement or power density increase compared to standard TO-247-3

应用 Application

• Industrial UPS
• Industrial SMPS
• Energy Storage
• Charger
• Welding

简介

IKZ75N65ES5属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IKZ75N65ES5晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。