IKY40N120CH3中文资料分立式IGBT数据手册Infineon规格书

描述 Description

Responding to the market requirement of high power density and highest performance discrete products Infineon introduces the new Kelvin Emitter TO-247PLUS 4pin package for 1200V IGBT. Higher current capability, improved thermal behaviour, extended C-E creepage are the key features of the TO-247PLUS package. The 4pin package configuration provides ultra-low inductance to the gate-emitter control loop with the 4pin package directly to the gate driver and allows for reduction the both of E on and E off losses amounting up to 20% lower total switching losses E ts.

特性 Features

• Extremely low control inductance loop with extra emitter pin for driver feedback
• 20% reduction in total switching losses compared to 3pin package using same technology
• Up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint

优势:
• Highest efficiency with lowest switching losses 1200 V IGBT
• High power density 1200V discrete IGBT
• Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247

应用 Application

• Uninterruptable power suppliers (UPS)
• Battery Charger
• Energy storage
• Portable welding converter

简介

IKY40N120CH3属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的IKY40N120CH3晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。