丝印：DPAK；Package：TO-252；N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.5 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.6Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust dev

文件：338.34 Kbytes 页数：2 Pages

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

文件：2.85536 Mbytes 页数：19 Pages

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

600V CoolMOS™ P6 Power Transistor Applications    PFC stages, hard switching PWM stages and resonant switching stages    for e.g. PC Silverbox, Adapter, LCD&PDPTV, Lighting, Server, Telecom    and UPS.

文件：2.85536 Mbytes 页数：19 Pages

Infineon

英飞凌